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Package Marking and Ordering Information
Part Number
FCPF400N60
Top Mark
FCPF400N60
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
V GS = 0 V, I D = 10 mA, T J = 25 ° C
V GS = 0 V, I D = 10 mA, T J = 150 ° C
I D = 10 mA, Referenced to 25 o C
V GS = 0 V, I D = 10 A
V DS = 480 V, V GS = 0 V
V DS = 480 V, T C = 125 o C
V GS = ±20 V, V DS = 0 V
600
650
-
-
-
-
-
-
-
0.6
700
-
-
-
-
-
-
-
1
10
±100
V
V/ o C
V
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 5 A
V DS = 20 V, I D = 5 A
2.5
-
-
-
0.35
11
3.5
0.40
-
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Q g(tot)
Q gs
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 380 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 480 V, V GS = 0 V
V DS = 380 V, I D = 5 A,
V GS = 10 V
(Note 4)
f = 1 MHz
-
-
-
-
-
-
-
-
-
1180
860
43
22
90
28
5
10
1
1580
1144
54
-
-
38
-
-
-
pF
pF
pF
pF
pF
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 380 V, I D = 5 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
13
7
43
6
37
24
95
21
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
10
30
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 5 A
V GS = 0 V, I SD = 5 A,
dI F /dt = 100 A/ μ s
-
-
-
-
240
2.7
1.2
-
-
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 2.3 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 5 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2012 Fairchild Semiconductor Corporation
FCPF400N60 Rev. C4
2
www.fairchildsemi.com
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